JPS6129539B2 - - Google Patents
Info
- Publication number
- JPS6129539B2 JPS6129539B2 JP54061233A JP6123379A JPS6129539B2 JP S6129539 B2 JPS6129539 B2 JP S6129539B2 JP 54061233 A JP54061233 A JP 54061233A JP 6123379 A JP6123379 A JP 6123379A JP S6129539 B2 JPS6129539 B2 JP S6129539B2
- Authority
- JP
- Japan
- Prior art keywords
- isolation layer
- region
- mask
- film
- element isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/763—Polycrystalline semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6123379A JPS55153344A (en) | 1979-05-18 | 1979-05-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6123379A JPS55153344A (en) | 1979-05-18 | 1979-05-18 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55153344A JPS55153344A (en) | 1980-11-29 |
JPS6129539B2 true JPS6129539B2 (en]) | 1986-07-07 |
Family
ID=13165292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6123379A Granted JPS55153344A (en) | 1979-05-18 | 1979-05-18 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55153344A (en]) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5818962A (ja) * | 1981-07-27 | 1983-02-03 | Toshiba Corp | 半導体装置 |
JPS5980967A (ja) * | 1982-11-01 | 1984-05-10 | Hitachi Ltd | 半導体装置の製造方法 |
US4498227A (en) * | 1983-07-05 | 1985-02-12 | Fairchild Camera & Instrument Corporation | Wafer fabrication by implanting through protective layer |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5228550B2 (en]) * | 1972-10-04 | 1977-07-27 |
-
1979
- 1979-05-18 JP JP6123379A patent/JPS55153344A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55153344A (en) | 1980-11-29 |
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